utc 2sc3669 npn epitaxial silicon transistor utc unisonic technologies co. ltd 1 qw-r209-015,a power amplifier applications power switching applications features *low saturation voltage v ce(sat) = 0.5v(max) *high speed switching time: t stg =1.0 s(typ.) to-252 1 1:base 2:collector 3: emitter absolute maximum ratings ( ta=25 c) parameter symbol limits unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5 v collector current ic 2 a base current i b 1 a collector power dissipation pc 1 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector emitter breakdown voltage v (br) ceo ic= 10ma, i b = 0 80 v collector cut-off current i cbo v cb =80v, i e = 0 1.0 a emitter cut-off current i ebo v eb = 5v, ic=0 1.0 a h fe1 v ce =2v, ic=0.5a 70 240 dc current gain h fe2 v ce =2v, ic=1.5a 40 collector-emitter saturation voltage v ce (sat) ic=1a, i b =0.05a 0.15 0.5 v base- emitter saturation voltage v be (sat) ic=1a, i b =0.05a 0.9 1.2 v transition frequency f t v ce =2v, ic=0.5a 100 mhz collector output capacitance cob v cb = 10v, i e = 0, f=1mhz 30 pf
utc 2sc3669 npn epitaxial silicon transistor utc unisonic technologies co. ltd 2 qw-r209-015,a parameter symbol test conditions min typ max unit turn-on time t on 0.2 storage time tstg 1.0 switching time fall time t f i b1 i b2 20 s input output i b1 i b2 vcc=30 v 30 i b1 = -i b2 =0.05a duty cycle Q 1% 0.2 s classification of hfe1 rank o y range 70-140 120-240 electrical characteristics curves ic-v ce collector -emitter voltage, vc e (v) collector current, ic (a) 0 246 10 0 0.4 0.8 1.2 1.6 12 2.0 8 common emitter ta=25 i b =5ma 10 15 20 25 35 v ce -ic collector -emitter voltage, vc e (v) collector current, ic (a) 0 0.4 0.8 1.2 2.0 0 0.2 0.4 0.6 0.8 2.4 1 1.6 common emitter ta=25 i b =5ma 10 15 20 30 40 50 v ce -ic collector current, ic (a) 0 0.4 0.8 1.2 2.0 0 0.2 0.4 0.6 0.8 2.4 1 1.6 common emitter ta=100 i b =5ma 10 15 20 30 40 50 collector -emitter voltage, vc e (v) v ce -ic collector -emitter voltage, vc e (v) collector current, ic (a) 0 0.4 0.8 1.2 2.0 0 0.2 0.4 0.6 0.8 2.4 1 1.6 common emitter ta=-55 i b =5ma 10 15 20 30 40 50 70
utc 2sc3669 npn epitaxial silicon transistor utc unisonic technologies co. ltd 3 qw-r209-015,a hfe -ic collector current ic (a) 0.01 0.03 0.1 10 30 50 0.3 100 300 1 500 2 dc current gain hfe common emitter v ce =2v ta=100 ta=25 ta=-55 v ce (sat) -ic collector current ic (a) 0.01 0.03 0.1 0.01 0.03 0.05 0.3 0.1 0.3 1 0.5 collector emitter saturation voltage, v ce (sat) common emitter ic/i b =20 ta=100 ta=25 ta=-55 0.05 0.5 2 v be (sat) -ic collector current, ic (a) 0.01 0.03 0.1 0.1 0.3 0.5 0.3 1 1 3 base emitter saturation voltage, v be (sat) common emitter ic/i b =20 ta=100 ta=25 ta=-55 0.05 0.5 ic-v be base -emitter voltage, v be (v) collector current, ic (a) 0 0.4 0.8 1.2 0 0.4 0.8 1.2 1.6 1.6 2.0 1.0 common emitter v ce =2 v 0.6 0.2 ta=-55 ta=100 ta=25 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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